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20V|3.2A|800mW
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MOSFET 2N-CH 20V 3.2A 6-MICROFET
Specifications
- Brand
- ON Semiconductor
- Package
- 6-WFDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
334pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDMJ1028N_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 10V | |
| Power - Max | 800mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-WFDFN Exposed Pad | |
| Supplier Device Package | 6-MicroFET (2x2) |
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CONN EDGE DUAL FMALE 20POS 0.156
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Datasheet & Documents
fdmj1028n.pdf
PDF Document · 7 pages
