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FDME910PZT_1

20V|8A (Ta)|2.1W (Ta)
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MOSFET P CH 20V 8A MICROFET

Specifications

Brand
ON Semiconductor
Package
MicroFet 1.6x1.6 Thin
Packaging
—
Weight
—

Total Inventory

223pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDME910PZT_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs24mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2110pF @ 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicroFet 1.6x1.6 Thin
Package / Case6-PowerUFDFN

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Datasheet & Documents

fdme910pzt.pdf

PDF Document · 6 pages

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