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100V|10A|2.2W
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MOSFET 2N-CH 100V
Specifications
- Brand
- ON Semiconductor
- Package
- 8-PowerWDFN
- Packaging
- —
- Weight
- —
Total Inventory
137pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDMD86100_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | 2 N-Channel (Dual) Common Source | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 10A | |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 50V | |
| Power - Max | 2.2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerWDFN | |
| Supplier Device Package | 8-Power 5x6 |
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Datasheet & Documents
fdmd86100.pdf
PDF Document · 8 pages
