Heisener Electronics
BOM

FDMD85100_1

100V|10.4A|2.2W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 100V

Specifications

Brand
ON Semiconductor
Package
8-PowerWDFN
Packaging
—
Weight
—

Total Inventory

337pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMD85100_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10.4A
Rds On (Max) @ Id, Vgs9.9mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2230pF @ 50V
Power - Max2.2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-Power 5x6

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Datasheet & Documents

fdmd85100.pdf

PDF Document · 12 pages

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Datasheet Preview

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