Heisener Electronics
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FDMC86106LZ

100V|3.3A (Ta), 7.5A (Tc)|2.3W (Ta), 19W (Tc)
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MOSFET N-CH 100V 3.3A POWER33

Specifications

Brand
ON Semiconductor
Package
8-MLP (3.3x3.3)
Packaging
—
Weight
—

Total Inventory

438pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMC86106LZ from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs103mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 50V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MLP (3.3x3.3)
Package / Case8-PowerWDFN

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Datasheet & Documents

fdmc86106lz.pdf

PDF Document · 7 pages

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