Heisener Electronics
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FDMC86102LZ_1

100V|7A (Ta), 18A (Tc)|2.3W (Ta), 41W (Tc)
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MOSFET N-CH 100V 7A 8MLP

Specifications

Brand
ON Semiconductor
Package
8-MLP (3.3x3.3)
Packaging
—
Weight
—

Total Inventory

51,269pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMC86102LZ_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs24mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1290pF @ 50V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 41W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MLP (3.3x3.3)
Package / Case8-PowerWDFN

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Datasheet & Documents

fdmc86102lz.pdf

PDF Document · 6 pages

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