Heisener Electronics
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FDMC86012_1

30V|23A (Ta)|2.3W (Ta), 54W (Tc)
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MOSFET N-CH 30V 23A 8MLP

Specifications

Brand
ON Semiconductor
Package
Power33
Packaging
—
Weight
—

Total Inventory

4,671pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMC86012_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs2.7mOhm @ 23A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds5075pF @ 15V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePower33
Package / Case8-PowerWDFN

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Datasheet & Documents

fdmc86012.pdf

PDF Document · 9 pages

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Datasheet Preview

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