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FDMC8200S_F106

30V|6A, 8.5A|700mW, 1W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 30V 6A/8.5A 8MLP

Specifications

Brand
ON Semiconductor
Package
8-PowerWDFN
Packaging
—
Weight
—

Total Inventory

136pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMC8200S_F106 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A, 8.5A
Rds On (Max) @ Id, Vgs20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 15V
Power - Max700mW, 1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

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Datasheet & Documents

fdmc8200s_f106.pdf

PDF Document · 12 pages

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