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FDMC4435BZ_1

30V|8.5A (Ta), 18A (Tc)|2.3W (Ta), 31W (Tc)
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MOSFET P-CH 30V 8.5A POWER33

Specifications

Brand
ON Semiconductor
Package
8-MLP (3.3x3.3)
Packaging
—
Weight
—

Total Inventory

392pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMC4435BZ_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2045pF @ 15V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MLP (3.3x3.3)
Package / Case8-PowerWDFN

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Datasheet & Documents

fdmc4435bz-f126.pdf

PDF Document · 8 pages

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