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FDMC2610

200V|2.2A (Ta), 9.5A (Tc)|2.1W (Ta), 42W (Tc)
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MOSFET N-CH 200V 2.2A POWER33-8

Specifications

Brand
Fairchild/ON Semiconductor
Package
8-MLP (3.3x3.3)
Packaging
—
Weight
—

Total Inventory

17,076pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMC2610 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesUniFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta), 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs200 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds960pF @ 100V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MLP (3.3x3.3)
Package / Case8-PowerWDFN

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Datasheet & Documents

fdmc2610.pdf

PDF Document · 8 pages

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