Heisener Electronics
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FDMB3900AN_1

25V|7A|800mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 25V 7A 8-MLP

Specifications

Brand
ON Semiconductor
Package
8-PowerWDFN
Packaging
—
Weight
—

Total Inventory

9,630pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMB3900AN_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C7A
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds890pF @ 13V
Power - Max800mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-MLP, MicroFET (3x1.9)

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Datasheet & Documents

fdmb3900an.pdf

PDF Document · 9 pages

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Datasheet Preview

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