Heisener Electronics
BOM

FDMA905P_F130

12V|10A (Ta)|2.4W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH

Specifications

Brand
ON Semiconductor
Package
6-MicroFET (2x2)
Packaging
—
Weight
—

Total Inventory

126pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMA905P_F130 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 6V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3405pF @ 6V
FET Feature-
Power Dissipation (Max)2.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-MicroFET (2x2)
Package / Case6-VDFN Exposed Pad

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