Heisener Electronics
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FDMA86151L_1

100V|3.3A (Ta)|2.4W (Ta)
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MOSFET N-CH 100V 3.3A 6-MLP

Specifications

Brand
ON Semiconductor
Package
6-MicroFET (2x2)
Packaging
—
Weight
—

Total Inventory

14,865pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMA86151L_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs88mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 50V
FET Feature-
Power Dissipation (Max)2.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-MicroFET (2x2)
Package / Case6-WDFN Exposed Pad

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Datasheet & Documents

fdma86151l.pdf

PDF Document · 9 pages

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