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FDMA2002NZ

30V|2.9A|650mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 30V 2.9A 6-MICROFET

Specifications

Brand
Fairchild/ON Semiconductor
Package
6-VDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

1,212,000pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDMA2002NZ from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.9A
Rds On (Max) @ Id, Vgs123 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 15V
Power - Max650mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)

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Datasheet & Documents

fdma2002nz.pdf

PDF Document · 8 pages

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Datasheet Preview

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