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20V|6.8A (Tc)|1.92W (Ta)
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MOSFET P-CH 20V 6.8A MICROFET
Specifications
- Brand
- ON Semiconductor
- Package
- 8-MLP, MicroFET (3x2)
- Packaging
- —
- Weight
- —
Total Inventory
429pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDM606P_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.92W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-MLP, MicroFET (3x2) | |
| Package / Case | 8-SMD, Flat Lead Exposed Pad |
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Datasheet & Documents
fdm606p.pdf
PDF Document · 12 pages
