Heisener Electronics
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FDM3300NZ_1

20V|10A|900mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 20V 10A MCRFET

Specifications

Brand
ON Semiconductor
Package
8-PowerVDFN
Packaging
—
Weight
—

Total Inventory

399pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDM3300NZ_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10A
Rds On (Max) @ Id, Vgs23mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1610pF @ 10V
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-MLP (3x3)

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Datasheet & Documents

fdm3300nz.pdf

PDF Document · 6 pages

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Datasheet Preview

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