Heisener Electronics
BOM

FDM2509NZ

20V|8.7A|800mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 20V 8.7A 2X5MLP

Specifications

Brand
Fairchild/ON Semiconductor
Package
6-WFDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

104,400pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDM2509NZ from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8.7A
Rds On (Max) @ Id, Vgs18 mOhm @ 8.7A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
Power - Max800mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-WFDFN Exposed Pad
Supplier Device Package6-MicroFET (2x5)

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Datasheet & Documents

fdm2509nz.pdf

PDF Document · 6 pages

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Datasheet Preview

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