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FDI9406-F085

40V|110A (Tc)|176W (Tj)
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MOSFET N-CH 40V 110A TO262AB

Specifications

Brand
ON Semiconductor
Package
I2PAK (TO-262)
Packaging
—
Weight
—

Total Inventory

438pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDI9406-F085 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs138nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7710pF @ 25V
FET Feature-
Power Dissipation (Max)176W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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Datasheet & Documents

fdi9406-f085.pdf

PDF Document · 6 pages

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