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FDI2532

150V|8A (Ta), 79A (Tc)|310W (Tc)
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MOSFET N-CH 150V 79A TO-262AB

Specifications

Brand
Fairchild/ON Semiconductor
Package
I2PAK (TO-262)
Packaging
—
Weight
—

Total Inventory

190,296pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDI2532 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs107nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5870pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

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Datasheet & Documents

fdi2532.pdf

PDF Document · 11 pages

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