Heisener Electronics
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FDI045N10A-F102

100V|120A (Tc)|263W (Tc)
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MOSFET N-CH 100V 120A I2PAK-3

Specifications

Brand
ON Semiconductor
Package
I2PAK (TO-262)
Packaging
—
Weight
—

Total Inventory

1,674pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDI045N10A-F102 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5270pF @ 50V
FET Feature-
Power Dissipation (Max)263W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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