Heisener Electronics
BOM

FDG6306P_1

20V|600mA|300mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2P-CH 20V 0.6A SC70-6

Specifications

Brand
ON Semiconductor
Package
6-TSSOP, SC-88, SOT-363
Packaging
—
Weight
—

Total Inventory

277pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDG6306P_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C600mA
Rds On (Max) @ Id, Vgs420mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds114pF @ 10V
Power - Max300mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88 (SC-70-6)

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Datasheet & Documents

fdg6306p.pdf

PDF Document · 5 pages

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