Heisener Electronics
BOM

FDG6304P-F169

25V|410mA (Ta)|300mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

INTEGRATED CIRCUIT

Specifications

Brand
ON Semiconductor
Package
6-TSSOP, SC-88, SOT-363
Packaging
—
Weight
—

Total Inventory

470pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDG6304P-F169 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C410mA (Ta)
Rds On (Max) @ Id, Vgs1.1Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds62pF @ 10V
Power - Max300mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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Datasheet & Documents

fdg6304p-f169.pdf

PDF Document · 5 pages

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