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FDG311N_1

20V|1.9A (Ta)|750mW (Ta)
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MOSFET N-CH 20V 1.9A SC70-6

Specifications

Brand
ON Semiconductor
Package
SC-88 (SC-70-6)
Packaging
—
Weight
—

Total Inventory

8,655pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDG311N_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs115mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88 (SC-70-6)
Package / Case6-TSSOP, SC-88, SOT-363

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Datasheet & Documents

fdg311n.pdf

PDF Document · 7 pages

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Datasheet Preview

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