Heisener Electronics
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FDFME3N311ZT

30V|1.8A (Ta)|1.4W (Ta)
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MOSFET N-CH 30V 1.8A 6MICROFET

Specifications

Brand
Fairchild/ON Semiconductor
Package
6-MicroFET (1.6x1.6)
Packaging
—
Weight
—

Total Inventory

307,464pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDFME3N311ZT from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs299 mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds75pF @ 15V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-MicroFET (1.6x1.6)
Package / Case6-UFDFN Exposed Pad

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Datasheet & Documents

fdfme3n311zt.pdf

PDF Document · 10 pages

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