
Contact
Send MessageFDFME3N311ZT
30V|1.8A (Ta)|1.4W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 30V 1.8A 6MICROFET
Specifications
- Brand
- Fairchild/ON Semiconductor
- Package
- 6-MicroFET (1.6x1.6)
- Packaging
- —
- Weight
- —
Total Inventory
307,464pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDFME3N311ZT from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Fairchild/ON Semiconductor | |
| Series | PowerTrench? | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 1.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 15V | |
| FET Feature | Schottky Diode (Isolated) | |
| Power Dissipation (Max) | 1.4W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-MicroFET (1.6x1.6) | |
| Package / Case | 6-UFDFN Exposed Pad |
Recommended Products

RES SMD 417 OHM 0.1% 0.15W 0603

RES THIN FILM SMD

FIXED IND 120UH 1A 250 MOHM TH

ASTMUPCFL-33-66-666MHZ-EY-E-T3
MEMS OSC XO 66.6660MHZ LVCMOS

CAP CER 220PF 50V C0G/NP0 1808

CAP CER 1200PF 25V X7R 0805

CAP ALUM 2200UF 20% 40V AXIAL

DIODE TVS 150V 600W SMB BI-DIR

CIRCUIT BREAKER MAG-HYDR LEVER

IC TRANSCEIVER HALF 1/1 10VSON
Datasheet & Documents
fdfme3n311zt.pdf
PDF Document · 10 pages










