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20V|2.6A (Ta)|1.4W (Ta)
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MOSFET P-CH 20V 2.6A 6MICROFET
Specifications
- Brand
- ON Semiconductor
- Package
- 6-MicroFET (1.6x1.6)
- Packaging
- —
- Weight
- —
Total Inventory
376pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDFME2P823ZT_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 142mOhm @ 2.3A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 10V | |
| FET Feature | Schottky Diode (Isolated) | |
| Power Dissipation (Max) | 1.4W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-MicroFET (1.6x1.6) | |
| Package / Case | 6-UFDFN Exposed Pad |
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Datasheet & Documents
fdfme2p823zt.pdf
PDF Document · 10 pages
