Heisener Electronics
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FDFMA2P857_1

20V|3A (Ta)|1.4W (Ta)
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MOSFET P-CH 20V 3A MICROFET2X2

Specifications

Brand
ON Semiconductor
Package
6-MicroFET (2x2)
Packaging
—
Weight
—

Total Inventory

336pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDFMA2P857_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds435pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-MicroFET (2x2)
Package / Case6-VDFN Exposed Pad

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Datasheet & Documents

fdfma2p857.pdf

PDF Document · 8 pages

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