Heisener Electronics
BOM

FDFMA2P029Z

20V|3.1A (Ta)|1.4W (Tj)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 20V 3.1A 2X2MLP

Specifications

Brand
Fairchild/ON Semiconductor
Package
6-MicroFET (2x2)
Packaging
—
Weight
—

Total Inventory

113,004pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDFMA2P029Z from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs95 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds720pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.4W (Tj)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-MicroFET (2x2)
Package / Case6-VDFN Exposed Pad

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