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FDD86367_1

80V|100A (Tc)|227W (Tj)
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MOSFET N-CHANNEL 80V 100A TO252

Specifications

Brand
ON Semiconductor
Package
D-PAK (TO-252)
Packaging
—
Weight
—

Total Inventory

465pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD86367_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4840pF @ 40V
FET Feature-
Power Dissipation (Max)227W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fdd86367.pdf

PDF Document · 8 pages

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