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FDD86102LZ

100V|8A (Ta), 35A (Tc)|3.1W (Ta), 54W (Tc)
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MOSFET N-CH 100V 8A DPAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-252, (D-Pak)
Packaging
—
Weight
—

Total Inventory

36,864pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD86102LZ from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs22.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1540pF @ 50V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fdd86102lz.pdf

PDF Document · 8 pages

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