Heisener Electronics
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FDD6696_1

30V|13A (Ta), 50A (Tc)|3.8W (Ta), 52W (Tc)
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MOSFET N-CH 30V 13A D-PAK

Specifications

Brand
ON Semiconductor
Package
D-PAK (TO-252)
Packaging
—
Weight
—

Total Inventory

349pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD6696_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1715pF @ 15V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fdd6696.pdf

PDF Document · 5 pages

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