Heisener Electronics
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FDD6685_1

30V|11A (Ta), 40A (Tc)|52W (Ta)
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MOSFET P-CH 30V 11A DPAK

Specifications

Brand
ON Semiconductor
Package
TO-252
Packaging
—
Weight
—

Total Inventory

4,200pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD6685_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 5V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1715pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fdd6685.pdf

PDF Document · 7 pages

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Datasheet Preview

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