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FDD6680AS

30V|55A (Ta)|60W (Ta)
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MOSFET N-CH 30V 55A DPAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-252
Packaging
—
Weight
—

Total Inventory

129,132pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD6680AS from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?, SyncFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 15V
FET Feature-
Power Dissipation (Max)60W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fdd6680as.pdf

PDF Document · 10 pages

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