Heisener Electronics
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FDD6612A

30V|9.5A (Ta), 30A (Tc)|2.8W (Ta), 36W (Tc)
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MOSFET N-CH 30V 9.5A DPAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
D-PAK (TO-252AA)
Packaging
—
Weight
—

Total Inventory

364,908pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD6612A from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.4nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 36W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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