Heisener Electronics
BOM

FDD5612

60V|5.4A (Ta)|3.8W (Ta), 42W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 60V 5.4A DPAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-252-3
Packaging
—
Weight
—

Total Inventory

1,183,776pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD5612 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs55 mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 30V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fdd5612.pdf

PDF Document · 5 pages

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