Heisener Electronics
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FDD3580_1

80V|7.7A (Ta)|3.8W (Ta), 42W (Tc)
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MOSFET N-CH 80V 7.7A D-PAK

Specifications

Brand
ON Semiconductor
Package
D-PAK (TO-252AA)
Packaging
—
Weight
—

Total Inventory

492pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD3580_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs29mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1760pF @ 40V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fdd3580.pdf

PDF Document · 5 pages

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