Heisener Electronics
BOM

FDD3510H

80V|4.3A, 2.8A|1.3W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 80V 4.3A/2.8A DPAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging
—
Weight
—

Total Inventory

36,264pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDD3510H from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN and P-Channel, Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C4.3A, 2.8A
Rds On (Max) @ Id, Vgs80 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 40V
Power - Max1.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device PackageTO-252-4L

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Datasheet & Documents

fdd3510h.pdf

PDF Document · 10 pages

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Datasheet Preview

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