Heisener Electronics
BOM

FDC6506P_1

30V|1.8A|700mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2P-CH 30V 1.8A SSOT6

Specifications

Brand
ON Semiconductor
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
—
Weight
—

Total Inventory

16,989pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDC6506P_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.8A
Rds On (Max) @ Id, Vgs170mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
Power - Max700mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6

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