Heisener Electronics
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FDC6392S_1

20V|2.2A (Ta)|960mW (Ta)
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MOSFET P-CH 20V 2.2A SSOT-6

Specifications

Brand
ON Semiconductor
Package
SuperSOT™-6
Packaging
—
Weight
—

Total Inventory

394pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDC6392S_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs150mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds369pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)960mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

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Datasheet & Documents

fdc6392s.pdf

PDF Document · 8 pages

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