Heisener Electronics
BOM

FDC365P_1

35V|4.3A (Ta)|1.6W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 35V 4.3A 6-SSOT

Specifications

Brand
ON Semiconductor
Package
SuperSOT™-6
Packaging
—
Weight
—

Total Inventory

493pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDC365P_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)35V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs55mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds705pF @ 20V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

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Datasheet & Documents

fdc365p.pdf

PDF Document · 8 pages

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Datasheet Preview

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