Heisener Electronics
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FDC3601N_1

100V|1A|700mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 100V 1A SSOT-6

Specifications

Brand
ON Semiconductor
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
—
Weight
—

Total Inventory

472pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDC3601N_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1A
Rds On (Max) @ Id, Vgs500mOhm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds153pF @ 50V
Power - Max700mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6

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Datasheet & Documents

fdc3601n.pdf

PDF Document · 5 pages

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Datasheet Preview

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