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30V|6.1A (Ta)|700mW (Ta)
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PT8 N 30V/20V, MOSFET
Specifications
- Brand
- ON Semiconductor
- Package
- SuperSOT™-6
- Packaging
- —
- Weight
- —
Total Inventory
272pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDC021N30_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.1A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SuperSOT™-6 | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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Datasheet & Documents
fdc021n30.pdf
PDF Document · 10 pages
