Heisener Electronics
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FDB9406L-F085

40V|110A (Tc)|176W (Tj)
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N-CHANNEL POWERTRENCH MOSFET

Specifications

Brand
ON Semiconductor
Package
D²PAK (TO-263AB)
Packaging
—
Weight
—

Total Inventory

400pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB9406L-F085 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8600pF @ 20V
FET Feature-
Power Dissipation (Max)176W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

fdb9406l-f085.pdf

PDF Document · 6 pages

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