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30V|11A (Ta), 54A (Tc)|55W (Tc)
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MOSFET N-CH 30V 54A TO-263AB
Specifications
- Brand
- ON Semiconductor
- Package
- TO-263AB
- Packaging
- —
- Weight
- —
Total Inventory
436pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDB8880_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 54A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 55W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263AB | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Datasheet & Documents
fdb8880.pdf
PDF Document · 13 pages
