Heisener Electronics
BOM

FDB86360_F085

80V|110A (Tc)|333W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 80V 110A TO263

Specifications

Brand
Fairchild/ON Semiconductor
Package
D2PAK (TO-263AB)
Packaging
—
Weight
—

Total Inventory

4,672pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB86360_F085 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.8 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs253nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14600pF @ 25V
FET Feature-
Power Dissipation (Max)333W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263AB)
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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