Heisener Electronics
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FDB7030BL_1

30V|60A (Ta)|60W (Tc)
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MOSFET N-CH 30V 60A TO-263AB

Specifications

Brand
ON Semiconductor
Package
TO-263AB
Packaging
—
Weight
—

Total Inventory

129pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB7030BL_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1760pF @ 15V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

fdb7030bl.pdf

PDF Document · 7 pages

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Datasheet Preview

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