Heisener Electronics
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FDB6670AS_1

30V|62A (Ta)|62.5W (Tc)
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MOSFET N-CH 30V 62A TO-263AB

Specifications

Brand
ON Semiconductor
Package
TO-263AB
Packaging
—
Weight
—

Total Inventory

466pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB6670AS_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C62A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 15V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 15V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

fdb6670as.pdf

PDF Document · 7 pages

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