Heisener Electronics
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FDB6021P_1

20V|28A (Ta)|37W (Tc)
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MOSFET P-CH 20V 28A TO-263AB

Specifications

Brand
ON Semiconductor
Package
TO-263AB
Packaging
—
Weight
—

Total Inventory

134pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB6021P_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1890pF @ 10V
FET Feature-
Power Dissipation (Max)37W (Tc)
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

fdb6021p.pdf

PDF Document · 5 pages

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