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200V|19A (Ta)|93W (Tc)
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MOSFET N-CH 200V 19A TO-263AB
Specifications
- Brand
- ON Semiconductor
- Package
- TO-263AB
- Packaging
- —
- Weight
- —
Total Inventory
385pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDB2670_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1320pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 93W (Tc) | |
| Operating Temperature | -65°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263AB | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Datasheet & Documents
fdb2670.pdf
PDF Document · 5 pages
