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FDB1D7N10CL7

100V|268A (Tc)|250W (Tc)
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FET 100V 1.7 MOHM D2PAK

Specifications

Brand
ON Semiconductor
Package
D²PAK (TO-263)
Packaging
—
Weight
—

Total Inventory

167pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB1D7N10CL7 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C268A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 15V
Rds On (Max) @ Id, Vgs1.65mOhm @ 100A, 15V
Vgs(th) (Max) @ Id4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs163nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11600pF @ 50V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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Datasheet & Documents

fdb1d7n10cl7.pdf

PDF Document · 8 pages

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