Heisener Electronics
BOM

FDB13AN06A0

60V|10.9A (Ta), 62A (Tc)|115W (Tc)
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MOSFET N-CH 60V 62A TO-263AB

Specifications

Brand
Fairchild/ON Semiconductor
Package
D2PAK (TO-263AB)
Packaging
—
Weight
—

Total Inventory

57,636pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB13AN06A0 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C10.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs13.5 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 25V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263AB)
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

fdb13an06a0.pdf

PDF Document · 14 pages

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